Semiconductor light emitting device including bonding layer and semiconductor light emitting device package

ABSTRACT

A light emitting device including a bonding layer; a barrier layer on the bonding layer; an adhesion layer on the barrier layer, in which the adhesion layer includes Pd, Au, and Sn; a reflective layer on the adhesion layer, in which the reflective layer includes Ag; an ohmic contact layer on the reflective layer, in which the ohmic contact layer includes Pt and Ag; a light emitting structure layer on the ohmic contact layer; and a passivation layer includes an insulating material on a side surface and a top surface of the light emitting structure layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of application Ser. No. 13/044,721,filed on Mar. 10, 2011 now U.S. Pat. No. 8,154,046, now allowed, whichis a Continuation of application Ser. No. 12/702,674, filed on Feb. 9,2010, now U.S. Pat. No. 7,928,464, which claims priority under 35 U.S.C.§119 of Korean Patent Application No. 10-2009-0010703, filed on Feb. 10,2009, which are hereby incorporated by references in their entirety.

BACKGROUND

The present disclosure relates to a light emitting device and a lightemitting device package.

A light emitting diode (LED) is a kind of a semiconductor device forconverting electric energy into light. The LED has advantages such aslow power consumption, a semi-permanent life cycle, a fast responsetime, safety, and environment friendly compared to the related art lightsource such as a fluorescent lamp and an incandescent bulb. Many studiesare being in progress in order to replace the related art light sourcewith an LED, and the LED is being increasingly used according to thetrend as a light source of lighting equipment such as a variety oflamps, a liquid crystal display device, a scoreboard, a streetlight inindoor and outdoor places.

In the LED, a stacked light emitting structure layer includes a firstconductive semiconductor layer, an active layer, and a second conductivesemiconductor layer, and the light is generated from the light emittingstructure layer according to an applied power supply.

In the LED, an epi-layer is used to form the light emitting structurelayer on a growth substrate such as a sapphire substrate, and then areflective layer is formed on the light emitting structure layer.Moreover, after bonding of the reflective layer and a conductive supportsubstrate, an LED having a vertical structure is manufactured through aprocess for removing the growth substrate.

In addition, when the growth substrate is separated through a laserbeam, due to a mechanical impact and explosive power of N₂ gas occurringduring a thermo-chemical decomposition of a buffer layer material, crackor breaking occurs in the epi-layer.

Furthermore, in a case of Au—Sn, Au—In, Pd—In, Pd—Sn (i.e., a solderbonding material system) used for bonding the reflective layer and theconductive support substrate, materials such as Pt, W, and Cr are usedas a diffusion barrier layer to prevent fast diffusion of Sn or In. Atthis point, in a case of Pt, a solder bonding material has anembrittlement property due to depletion of Sn or In and in a case of Wand Cr, separation occurs due to a poor adhesiveness of Sn or In.

SUMMARY

The embodiments provide a light emitting device with a new structure.

The embodiments provide a light emitting device capable of preventingcrack and breaking phenomenon occurring during the growth substrateseparation.

The embodiments provide a light emitting device for preventing a solderbonding material from diffusing to a reflective layer or a lightemitting structure layer

The embodiments provide a light emitting device for improvingembrittlement and adhesiveness.

In an embodiment, a light emitting device comprises: a conductivesupport substrate; a bonding layer on the conductive support substrate;a reflective layer on the bonding layer; and a light emitting structurelayer on the reflective layer, wherein the bonding layer comprises asolder bonding layer on the conductive support substrate and at leastone of a diffusion barrier layer and an adhesion layer on the solderbonding layer, the solder bonding layer, the diffusion barrier layer,and the adhesion layer being formed of a metal or an alloy of which theYoung's Modulus is 9 GPa to 200 GPa.

In another embodiment, a light emitting device comprises: a conducivesupport substrate; a solder bonding layer on the conductive supportsubstrate; a diffusion barrier layer on the solder bonding layer; anadhesion layer on the diffusion barrier layer; a reflective layer on theadhesion layer; and a light emitting structure layer on the reflectivelayer, wherein: the solder bonding layer, the diffusion barrier layer,and the adhesion layer are formed of a metal or an alloy; and thediffusion barrier layer or the adhesion layer is formed of a metal or analloy including Cu or Nb.

In further another embodiment, a light emitting device packagecomprises: a package body; a first electrode and a second electrodeinstalled on the package body; and a light emitting device connected tothe first electrode and the second electrode electrically, wherein thelight emitting device comprises: a conductive support substrate; abonding layer on the conductive support substrate; a reflective layer onthe bonding layer; and a light emitting structure layer on thereflective layer, wherein the bonding layer comprises a solder bondinglayer on the conductive support substrate and at least one of adiffusion barrier layer and an adhesion layer on the solder bondinglayer, the solder bonding layer, the diffusion barrier layer, and theadhesion layer being formed of a metal or an alloy of which the Young'sModulus is 9 GPa to 200 GPa.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view illustrating a light emitting device according to anembodiment.

FIGS. 2 to 11 are views illustrating a method of manufacturing a lightemitting device according to an embodiment.

FIG. 12 is a sectional view of a light emitting device package includinga light emitting device according to an embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

In the descriptions of embodiments, it will be understood that when alayer (or film), a region, a pattern, or a structure is referred to asbeing ‘on/above/over/upper’ substrate, each layer (or film), a region, apad, or patterns, it can be directly on substrate each layer (or film),the region, the pad, or the patterns, or intervening layers may also bepresent. Further, it will be understood that when a layer is referred toas being ‘under/below/lower’ each layer (film), the region, the pattern,or the structure, it can be directly under another layer (film), anotherregion, another pad, or another patterns, or one or more interveninglayers may also be present. Therefore, meaning thereof should be judgedaccording to the spirit of the present disclosure.

In the figures, a dimension of each of elements may be exaggerated forclarity of illustration, and the dimension of each of the elements maybe different from an actual dimension of each of the elements. Not allelements illustrated in the drawings must be included and limited to thepresent disclosure, but the elements except essential features of thepresent disclosure may be added or deleted.

Hereinafter, a light emitting device, a method of manufacturing thesame, and a light emitting device package will be described below withreference to the accompanying drawings.

FIG. 1 is a view illustrating a light emitting device according to anembodiment.

Referring to FIG. 1, the light emitting device 100 includes a conductivesupport substrate 175, a bonding layer 170 on the conductive supportsubstrate 175, a reflective layer 160 on the bonding layer 170, an ohmiccontact layer 150 on the reflective layer 160, a protective layer 140 ona boundary region of the top of the bonding layer 170, a light emittingstructure layer 135 on the ohmic contact layer 150 and the protectivelayer 140 to generate light, a passivation layer 180 for protecting thelight emitting structure layer 135, a current blocking layer 145 betweenthe reflective layer 160 and the light emitting structure layer 135, andan electrode unit 115 on the light emitting structure layer 135.

The conductive support substrate 175 supports the light emittingstructure layer 135. The conductive support substrate 175 and theelectrode unit 115 may apply a power to the light emitting structurelayer 135. The conductive support substrate 175 includes at least one ofCopper (Cu), Gold (Au), Nickel (Ni), Molybdenum (Mo), Copper-Tungsten(Cu—W), a carrier wafer (for example, Si, Ge, GaAs, ZnO, Sic, etc). Thethickness of the conductive support substrate 175 may vary according toa design of the light emitting device 100, and may be 50 μm to 300 μm,for example.

The bonding layer 170 is formed on the conductive support substrate 175.The bonding layer 170 is formed below the reflective layer 160 and theprotective layer 140. The bonding layer 170 contacts the reflectivelayer 160, the ohmic contact layer 150, and the protective layer 140 toallow them strongly to bond to the conductive support substrate 175.

The bonding layer 170 includes a solder bonding layer with a firstsolder bonding layer 173 and a second solder bonding layer 174, adiffusion barrier layer 172 on the first solder bonding layer 173, andan adhesion layer 171 on the diffusion barrier layer 172.

The bonding layer 170 prevents crack and breaking phenomenon occurringduring a separation of a growth substrate, and also prevents a solderbonding material from being diffused into the reflective layer 160 orthe light emitting structure layer 135. Also, the bonding layer 170 isformed to improve embrittlement and adhesiveness.

In the bonding layer 170, the adhesion layer 171 or the diffusionbarrier layer 172 may be formed of a metal or an alloy of which theYoung's Modulus is 9 GPa to 200 GPa and the first solder bonding layer173 and the second solder bonding layer 174 may be formed of a materialfor a solder bonding alloy of which the Young's Modulus is 9 GPa to 200GPa.

For example, the adhesion layer 171 may be formed with a thickness of0.05 μm to 0.2 μm. The diffusion barrier layer 172 may be formed with athickness of 1 μm to 3 μm. The solder bonding layer including the firstsolder bonding layer 173 and the second solder bonding layer 174 may beformed with a thickness of 2 μm to 4 μm.

For example, the adhesion layer 171 or the diffusion barrier layer 172may be formed of a metal or an ally including at least one of Cu(129),Nb(105), Sn(49), In(10.1), Sc(79.3), Ta(185.7), V(127.7), Si(113),Ag(82.7), Au(130), Zn(104.5), Sb(54.7), Al(70.6), Ge(79.9), Hf(141),La(37.9), Mg(44.7), Mn(191), Ni(199), Pd(121), and Ti(120). Moreover,for example, the first solder bonding layer 173 and the second solderbonding layer 174 may be formed of a metal or an alloy including atleast one of Sn(49), In(10.5), Ga(9.8), Bi(34), Pb(16), and Au(130).However, the number in a parenthesis represents the Young's Modulus (GPaunit).

If materials used for the bonding layer 170 have the Young's Modulus of9 GPa to 200 GPa, crack and breaking phenomenon occurring during theseparation of the growth substrate can be prevented. Materials used forthe adhesion layer 171 or the diffusion barrier layer 172 may preventthe diffusion of Sn or In of the first solder bonding layer 173 and thesecond solder bonding layer 174.

The adhesion layer 171 and the diffusion barrier layer 172 may be formedof the same material or respectively different materials. If the samematerial is used, only one of the adhesion layer 171 and the diffusionbarrier layer 172 is formed.

In addition, the diffusion barrier layer 172 may be formed through anelectro-plating or electroless-plating method besides physical vapordeposition (PVD) according to kinds of a selected material.

In this embodiment, the diffusion barrier layer 172 is formed of Cu orNb, and has an excellent property for preventing crack and breakingphenomenon and diffusion of Sn or In.

For example, the adhesion layer 171/the diffusion barrier layer 172/thefirst and second solder bonding layers 173 and 174 may be formed of oneof Ti—Ni/Cu/Au—Sn, Nb/Cu/Au—Sn, Nb/Nb—Sn/Au—In, or Nb/Nb/Au—Sn.

The reflective layer 160 may be formed on the bonding layer 170. Thereflective layer 160 reflects light incident from the light emittingstructure layer 135 such that light extraction efficiency can beimproved. The reflective layer 160 may be selectively formed and may notbe necessarily formed.

The reflective layer 160 may be formed of a metal or an alloy includingat least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. Inaddition, the reflective layer 160 may be formed with a multilayer usingthe above metal or alloy and a transparent conductive material such asIZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO. For example, the reflectivelayer 160 may be stacked by IZO/Ni, AZO/Ag, IZO/Ag/Ni, or AZO/Ag/Ni. Forexample, the reflective layer 160 may be formed of a metal or an alloy,which includes Ag.

In this embodiment, although it is illustrated that the top of thereflective layer 160 contacts the ohmic contact layer 150, thereflective layer 160 may contact the protective layer 140, the currentblocking layer 145, or the light emitting structure layer 135.

The ohmic contact layer 150 may be formed on the reflective layer 160.The ohmic contact layer 150 ohmic-contacts the second conductivesemiconductor layer 130 to smoothly provide a power to the lightemitting structure layer 135 and may include at least one of ITO, IZO,IZTO, IAZO, IGZO, IGTO, AZO, and ATO. The ohmic contact layer 150 may beselectively formed and may not be necessarily formed.

That is, the ohmic contact layer 150 may selectively use a transparentconductive layer and a metal, and also may be realized with a singlelayer or a multilayer including at least one of indium tin oxide (ITO),indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminumzinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tinoxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO),gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni, Ag, Ni/IrOx/Au, andNi/IrOx/Au/ITO

In this embodiment, although it is illustrated that the ohmic contactlayer 150 contacts the bottom and side of the current blocking layer145, the ohmic contact layer 150 may be disposed being spaced apart fromthe current blocking layer 145 or may contact only the side of thecurrent blocking layer 145. Moreover, the reflective layer 160 may beformed of a material that ohmic-contacts the second conductivesemiconductor layer 130, and the ohmic contact layer 150 may not beformed.

The current blocking layer 145 may be formed between the ohmic contactlayer 150 and the second conductive semiconductor layer 130. The currentblocking layer 145 has the top that contracts the second conductivesemiconductor layer 130 and also has the bottom and side that contactthe ohmic contact layer 150.

The current blocking layer 145 may be formed and its portion mayvertically overlap the electrode unit 115. Therefore, a phenomenon thatcurrent is concentrated on the shortest distance between the electrodeunit 115 and the conductive support substrate 175 is alleviated toimprove luminescence efficiency of the light emitting device 100.

The current blocking layer 145 may be formed of a material having alower electrical conductivity than the reflective layer 160 or the ohmiccontact layer 150, a material for Schottky contact with the secondconductive semiconductor layer 130, or an electrical insulationmaterial, and may include at least one of ITO, IZO, IZTO, IAZO, IGZO,IGTO, AZO, ATO, ZnO, SiO₂, SiO_(x), SiO_(x)N_(y), Si₃N₄, Al₂O₃, TiO_(x),Ti, Al, and Cr, for example.

The current blocking layer 145 may not be necessarily formed, and may beomitted according to a structure of the light emitting device 100.

The protective layer 140 may be formed on a boundary region of the topof the bonding layer 170. That is, the protective layer 140 may beformed on the boundary region between the light emitting structure layer135 and the bonding layer 170, and may be formed of a conductiveprotective layer using a conductive material or a non-conductiveprotective layer using a non-conductive material.

The conductive protective layer may be formed of a transparentconductive oxide layer or may include at least one of Ti, Ni, Pt, Pd,Rh, Ir, and W. For example, the transparent conductive oxide layer maybe formed of at least one of indium tin oxide (ITO), indium zinc oxide(IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO),indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO),aluminum zinc oxide (AZO), antimony tin oxide (ATO), and gallium zincoxide (GZO).

In addition, if isolation etching is performed on the light emittingstructure layer 135 to separate the light emitting structure layer 135by a unit chip without the protective layer 140 during a chip separationprocess, fragments are generated from the bonding layer 170. Thefragments are attached between the second conductive semiconductor layer130 and the active layer 120 or between the active layer 120 and thefirst conductive semiconductor layer 110, such that electrical short mayoccur. Accordingly, the conductive protective layer is formed of amaterial that is not cracked or does not generate fragments duringisolation etching. Therefore, the fragments of the bonding layer 170 arenot generated and the electrical short is not occurred.

Since the conductive protective layer has electrical conductivity,current may be injected on the light emitting structure 135 through theconductive protective layer. Accordingly, light may effectively occur atthe active layer 120 disposed on the conductive protective layer on aboundary region of the light emitting structure layer 135 and also lightefficiency of the light emitting device can be improved.

Moreover, the conductive protective layer reduces an operating voltageincreased by the current blocking layer 145, such that the operatingvoltage of the light emitting device can be lowered.

The conductive protective layer may be formed of the same material asthe ohmic contact layer 150.

The non-conductive protective layer has very low electrical conductivityand thus may be substantially formed of a non-conductive material. Thenon-conductive protective layer may be formed of a material having aconsiderably lower electrical conductivity than the reflective layer 160or the ohmic contact layer 150, a material for Schottky contact with thesecond conductive semiconductor layer 130, or an electrical insulationmaterial. For example, the non-conductive protective layer may be formedof ZnO or SiO₂.

The non-conductive protective layer increases the distance between thebonding layer 170 and the active layer 120. Accordingly, probabilitythat electrical short occurs between the bonding layer 170 and theactive layer 120 can be reduced.

In addition, if isolation etching is performed on the light emittingstructure layer 135 to separate the light emitting structure layer 135by a unit chip without the non-protective layer 140 during a chipseparation process, fragments are generated from the bonding layer 170.The fragments are attached between the second conductive semiconductorlayer 130 and the active layer 120 or between the active layer 120 andthe first conductive semiconductor layer 110, such that electrical shortmay occur.

The non-conductive protective layer is formed of a material that is notcracked or does not generate fragments during isolation etching or anelectrical insulation material that does not cause electrical short evenif its portion is cracked or a small amount of fragments are generated.Therefore, the fragments of the bonding layer 170 are not generated andthe short circuit is not occurred.

The protective layer 140 partially overlaps the light emitting structurelayer 135 in a vertical direction.

The protective layer 140 increases the distance of the side between thebonding layer 170 and the active layer 120. Accordingly, probabilitythat electrical short occurs between the bonding layer 170 and theactive layer 120 can be reduced.

The protective layer 140 may not be necessarily formed, and may beomitted according to a structure of the light emitting device 100.

The light emitting structure layer 135 may be formed on the ohmiccontact layer 150 and the protective layer 140.

An inclined plane may be formed at the side of the light emittingstructure layer 135 while isolation etching is performed for theseparation of a unit chip, and a portion of the inclined plane overlapsthe protective layer 140 in a vertical direction.

A partial top of the protective layer 140 may be exposed by theisolation etching. Accordingly, the protective layer 140 contacts apartial region of the light emitting structure layer 135 in a verticaldirection and the remaining portion does not contact the light emittingstructure layer 135 in a vertical direction.

The light emitting structure layer 135 may include a compoundsemiconductor layer of a plurality of Group III to Group V elements, andmay include a first conductive semiconductor layer 110, an active layer120 below the first conductive semiconductor layer 110, and the secondconductive semiconductor layer 130 below the active layer 120.

The first conductive semiconductor layer 110 may be formed of a compoundsemiconductor of Group III to Group V elements doped with a firstconductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN,AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. If the first conductivesemiconductor layer 110 is an N-type semiconductor layer, the firstconductive dopant includes an N-type dopant such as Si, Ge, Sn, Se, andTe. The first conductive semiconductor layer 110 may be formed with asingle layer or a multilayer, but is not limited thereto.

The active layer 120 is formed below the first conductive semiconductorlayer 110 and may include any one of a single quantum well structure, amultiple quantum well (MQW) structure, a quantum dot structure, and aquantum wire structure. The active layer 120 may be formed of a welllayer and a barrier layer using a compound semiconductor material ofGroup III to Group V elements, such as InGaN well layer/GaN barrierlayer or InGaN well layer/AlGaN barrier layer.

A clad layer may be formed between the active layer 120 and the firstconductive semiconductor layer 110 or between the active layer 120 andthe second conductive semiconductor layer 130. The clad layer may beformed of an AlGaN based semiconductor.

The second conductive semiconductor layer 130 may be formed below theactive layer 120 and is formed of a compound semiconductor of Group IIIto Group V elements doped with a second conductive dopant, for example,GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP,and AlGaInP. If the second conductive semiconductor layer 130 is aP-type semiconductor layer, the second conductive dopant includes aP-type dopant such as Mg and Zn. The second conductive semiconductorlayer 130 may be formed with a single layer or a multilayer, and is notlimited thereto.

In addition, the light emitting structure layer 135 may include anN-type semiconductor layer below the second conductive semiconductorlayer 130. For example, the light emitting structure layer 135 mayinclude at least one of N-P junction, P-N junction, N-P-N junction andP-N-P junction structures.

The electrode unit 115 is formed on the light emitting structure layer135. The electrode unit 115 may include a pad part for wire bonding anda finger part extending from the pad part. The finger part may bedivided with a predetermined pattern and may be formed with variousforms.

A roughness pattern 112 may be formed on the top of the first conductivesemiconductor layer 110 to achieve light extraction efficiency.Accordingly, a roughness pattern may be formed on the electrode unit 115and is not limited thereto.

The passivation layer 180 may be formed on at least the side of thelight emitting structure layer 135. Moreover, the passivation layer 180may be formed on the first conductive semiconductor layer 110 and theprotective layer 140, but is not limited thereto.

The passivation layer 180 may be formed to electrically protect thelight emitting structure layer 135.

For example, the passivation layer 180 may be formed of at least one ofoxide silicon (SiO_(x)), oxide nitride silicon (SiO_(x)N_(y)), nitridesilicon (Si₃N₄), and oxide aluminum (Al₂O₃).

Hereinafter, a method of manufacturing a light emitting device will bedescribed in more detail according to an embodiment. However, theoverlapping description will be omitted or briefly described again.

FIGS. 2 to 11 are views illustrating a method of manufacturing a lightemitting device according to an embodiment.

Referring to FIG. 2, a light emitting structure layer 135 is formed on agrowth substrate 101. The growth substrate 101 may be formed of at leastone of sapphire (Al₂O₃), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, andis not limited thereto.

The light emitting structure layer 135 may be formed by growing a firstconductive semiconductor layer 110, an active layer 120, and a secondconductive semiconductor layer 130 on the growth substrate 101.

The light emitting structure layer 135 may be formed through variousmethods such as Metal Organic Chemical Vapor Deposition (MOCVD),Chemical Vapor Deposition (CVD), Plasma-Enhanced Chemical VaporDeposition (PECVD), Molecular Beam Epitaxy (MBE), and Hydride VaporPhase Epitaxy (HVPE), and is not limited thereto.

In addition, a buffer layer (not shown) and/or an undoped nitride layer(not shown) may be formed between the light emitting structure layer 135and the growth substrate 101 in order to alleviate a lattice mismatchdue to a lattice constant difference.

Referring to FIG. 3, a protective layer 140 is selectively formed on thelight emitting structure layer 135, being corresponding to a unit chipregion.

The protective layer 140 may be formed on a boundary of the unit chipregion using a mask pattern. The protective layer 140 may be formedusing various deposition methods such as a sputtering method.

Referring to FIG. 4, a current blocking layer 145 may be formed on thesecond conductive semiconductor layer 130. The current blocking layer145 may be formed using a mask pattern.

The protective layer 140 and the current blocking layer 145 may beformed of the same material. In this case, the protective layer 140 andthe current blocking layer 145 may be simultaneously formed using oneprocess without an additional process. For example, after a SiO₂ layeris formed on the second conductive semiconductor layer 130, theprotective layer 140 and the current blocking layer 145 may besimultaneously formed using a mask pattern.

Referring to FIGS. 5 and 6, an ohmic contact layer 150 is formed on thesecond conductive semiconductor layer 130 and the current blocking layer145, and then a reflective layer 160 may be formed on the ohmic contactlayer 150.

The ohmic contact layer 150 and the reflective layer 160 may be formedusing one of E-beam deposition, Sputtering, and Plasma Enhanced ChemicalVapor Deposition (PECVD).

Referring to FIGS. 7 and 8, a conductive support substrate 175 isprepared.

An adhesion layer 171, a diffusion barrier layer 172, and a first solderbonding layer 173 are formed on the protective layer 140 and thereflective layer 160, and then a second solder bonding layer 174 isformed on the conductive support substrate 175. For example, theadhesion layer 171, the first solder bonding layer 173, and the secondsolder bonding layer 174 are formed using a PVD method, and thediffusion barrier layer 172 may be formed using an electro-plating orelectroless-plating method besides the PVD method.

Furthermore, since the first solder bonding layer 173 is attached to thesecond solder bonding layer 174, the structure of FIG. 6 is attached tothe conductive support substrate 175 by a bonding layer 170.

Referring to FIG. 9, the growth substrate 101 is removed from the lightemitting structure layer 135. FIG. 9 is a reversed view of the structureof FIG. 8.

The growth substrate 101 may be removed by a Laser Lift Off method or aChemical Lift Off method.

Since materials used for the bonding layer 170 have the Young's Modulusof 9 GPa to 200 GP, crack and breaking phenomenon occurring during theseparation of the growth substrate 101 can be prevented.

Referring to FIG. 10, isolation etching is performed on the lightemitting structure layer 135 by a unit chip region, such that aplurality of light emitting structure layers 135 are divided. Forexample, the isolation etching may be performed using a dry etchingmethod such as Inductively Coupled Plasma (ICP).

Referring to FIG. 11, a passivation layer 180 is formed on theprotective layer 140 and the light emitting structure layer 135, andthen is selectively removed to expose the top of the first conductivesemiconductor layer 110.

Then, a roughness pattern 112 is formed on the first conductivesemiconductor layer 110 to improve light extraction efficiency, and anelectrode part 115 is formed on the roughness pattern 112. The roughnesspattern 112 may be formed through a wet etching process or a dry etchingprocess.

Then, the structure is separated by a unit chip region through a chipseparation process such that a plurality of light emitting devices canbe manufactured.

The chip separation process may include a breaking process forseparating a chip by applying a physical impact using a blade, a laserscribing process for separating a chip by projecting laser on a chipboundary, and an etching process including wet or dry etching, but isnot limited thereto.

FIG. 12 is a sectional view of a light emitting device package includinga light emitting device according to an embodiment.

Referring to FIG. 12, the light emitting device package includes apackage body 30, a first electrode 31 and a second electrode 32installed at the package body 30, a light emitting device 100 installedat the package body 30 to electrically connect to the first electrode 31and the second electrode 32, and a molding member 40 surrounding thelight emitting device 100.

The package body 30 may be formed including a silicon material, asynthetic resin material, or a metal material, and may have a cavitywhose side is inclined.

The first electrode 31 and the second electrode 32 are electricallyseparated from each other and provide a power to the light emittingdevice 100. In addition, the first electrode 31 and the second electrode32 reflects a light generated from the light emitting device 100 toincrease light efficiency, and exhausts a heat generated from the lightemitting device 100 to the external.

The light emitting device 100 is installed on the package body 30, thefirst electrode 31, or the second electrode 32.

The light emitting device 100 may be electrically connected to one ofthe first electrode 31 and the second electrode 32 using one of a wiremethod, a flip chip method, or a die bonding method. In this embodiment,it is illustrated that the light emitting device 100 is electricallyconnected to the first electrode 31 through a wire 50 and directlyelectrically contacts the second electrode 32.

The molding member 40 surrounds the light emitting device 100 such thatthe light emitting device 100 can be protected. In addition, the moldingmember 40 includes a fluorescent substance such that a wavelength of alight emitted from the light emitting device 100 can be changed.

The embodiments can provide a light emitting device with a newstructure.

The embodiments can provide a light emitting device capable ofpreventing crack and breaking phenomenon occurring during the growthsubstrate separation.

The embodiments can provide a light emitting device for preventing asolder bonding material from diffusing to a reflective layer or a lightemitting structure layer

The embodiments can provide a light emitting device for improvingembrittlement and adhesiveness.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device comprising: a bondinglayer; a barrier layer on the bonding layer; an adhesion layer on thebarrier layer, wherein the adhesion layer comprises Pd, Au, and Sn; areflective layer on the adhesion layer, wherein the reflective layercomprises Ag; an ohmic contact layer on the reflective layer, whereinthe ohmic contact layer comprises Pt and Ag; a light emitting structurelayer on the ohmic contact layer; and a passivation layer comprising aninsulating material on a side surface and a top surface of the lightemitting structure layer, wherein the barrier layer comprises Cu.
 2. Thelight emitting device according to claim 1, wherein the reflective layerfurther comprises Pt.
 3. The light emitting device according to claim 1,wherein the reflective layer comprises multi layers and one layer of themulti layers comprises Ag.
 4. The light emitting device according toclaim 1, wherein the passivation layer comprises silicon oxide.
 5. Thelight emitting device according to claim 1, wherein the bonding layercomprises an alloy of Au—Sn.
 6. The light emitting device according toclaim 1, wherein the reflective layer comprises an alloy of Ni—Ag. 7.The light emitting device according to claim 1, wherein the lightemitting structure layer comprises a roughness pattern.
 8. A lightemitting device comprising: a bonding layer; a barrier layer on thebonding layer, wherein the barrier layer comprises Cu or Si; an adhesionlayer on the barrier layer, wherein the adhesion layer comprises Ni, Sn,and Ti; a reflective layer on the adhesion layer; an ohmic contact layeron the reflective layer; a light emitting structure layer on the ohmiccontact layer; and a passivation layer comprising an insulating materialon a side surface and a top surface of the light emitting structurelayer, wherein the light emitting structure layer comprises a roughnesspattern.
 9. The light emitting device according to claim 8, wherein thereflective layer comprises Ag.
 10. The light emitting device accordingto claim 8, wherein the ohmic contact layer comprises Ni.
 11. The lightemitting device according to claim 8, wherein the passivation layercomprises silicon oxide.
 12. The light emitting device according toclaim 8, wherein the bonding layer comprises an alloy of Au—Sn.
 13. Thelight emitting device according to claim 8, wherein the reflective layercomprises an alloy of Ni—Ag.
 14. A light emitting device comprising: abonding layer; a barrier layer on the bonding layer; an adhesion layeron the barrier layer, wherein the adhesion layer comprises Au, Ni, Sn,and Ti; a reflective layer on the adhesion layer; an ohmic contact layeron the reflective layer; a light emitting structure layer on the ohmiccontact layer; and a passivation layer comprising an insulating materialon a side surface and a top surface of the light emitting structurelayer, wherein the barrier layer comprises Si.
 15. The light emittingdevice according to claim 14, wherein the ohmic contact layer comprisesNi.
 16. The light emitting device according to claim 14, wherein thereflective layer comprises Ag.
 17. The light emitting device accordingto claim 14, wherein the passivation layer comprises silicon oxide. 18.The light emitting device according to claim 14, wherein the bondinglayer comprises an alloy of Au—Sn.
 19. The light emitting deviceaccording to claim 14, wherein the reflective layer comprises an alloyof Ni—Ag.
 20. The light emitting device according to claim 14, whereinthe light emitting structure layer comprises a roughness pattern.